Student research opportunities
Resistive switching as a nonvolatile memory
Project Code: CECS_601
This project is available at the following levels:
Engn4200
Please note that this project is only for undergraduate students.
Supervisor:
Dinesh VenkatachalamOutline:
Growth in the use of portable electronic devices and embedded electronic systems has resulted in an increased demand for low-power, high-density non-volatile memory (NVM). However, traditional memory technologies based on charge-storage are rapidly approaching miniaturization limits due to the difficulty of storing electrons in smaller and smaller cells. Several competing technologies are being explored to overcome such limitations, including resistive random access memory (RRAM) in which the resistance of a thin film is switched between low and high values by the application of current-voltage pulses. The mechanisms underpinning this resistive switching process are particularly intriguing and will form the focus of the current project. This project will involve experimental studies of resistive switching in pure- and alloyed-hafnium oxide thin films and, depending on the interest and expertise of the student, can also include a range of computer modeling studies.
