Student research opportunities
Nanoindentation of GaAs
Project Code: CECS_636
This project is available at the following levels:
Engn4200
Please note that this project is only for undergraduate students.
Supervisors:
Simon RuffellJodie Bradby
Outline:
GaAs is a well-known semiconductor that is currently utilized in the manufacture of infrared light-emitting diodes, laser diodes and solar cells. It is interesting to note that the mechanical deformation mechanisms in GaAs at the nanoscale remain unclear. A recent study suggests that GaAs undergoes a phase transformation during the early stages of nanoindentation whilst previous work has shown the material deforms only via the generation of dislocations. We propose to investigate this anomaly with a combination of techniques including nanoindentation, electrical characterization and electron microscopy.
Nanoindentation is a very useful technique for characterizing the nano-mechanical properties of materials. The Dept of EME has two nanoindentation instruments with a force capability range of 1 uN to 1 N. ANU's state-of-the-art nanoindentation facility has a range of in-situ techniques including electrical characterisation and atomic force microscopy. The nanoindentation group at the ANU uses the facility for both for traditional measurement of mechanical parameters and as a nanofabrication tool for engineering spatially-isolated mechanically deformed regions with novel properties for a range of applications.
