Student research opportunities
Properties of Al2O3 deposited by atomic layer deposition
Project Code: CECS_760
This project is available at the following levels:
Engn4200, Engn R&D, Honours, Summer Scholar, Masters, PhD
Keywords:
Solar cells Photovoltaics Semiconductors
Supervisor:
Assoc Professor Klaus WeberOutline:
Al2O3 is a very interesting material for Si solar cell applications since it offers excellent surface passivation. Atomic layer deposition can result in particularly high qualitiy films of Al2O3, with precisely controlled thickness.
To fully exploit these films, it is necessary to develop a thorough understanding of how their properties depend on surface preparation, deposition conditions and post deposition treatments.
In this project, some aspects of these films will be explored. Primary measurement techniques are Capacitance-Voltage measurements for the determination of charge density, corona charging and Kelvin probe measurements for the controlled variation of the surface charge density, and Photoluminescence and lifetime measurements for the determination of the degree of surface passivation offered by the films.
Goals of this project
A better understanding of the properties of Al2O3 films
Requirements/Prerequisites
Strong semiconductor background. Suitable for students with HD in ENGN3334 or equivalent, and very good overall academic record.
Student Gain
Experience in experimental research
Deeper understanding of semiconductor physics, solar cells and characterisation techniques
Background Literature
Can be supplied on request
